MMBFJ305 ? n-channe l rf amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com MMBFJ305 rev. a0 1 july 2011 MMBFJ305 n-channel rf amplifier features ? this device is designed primarily for electronic switching applications such as low on resistance analog switching. ? sourced from process 50. absolute maximum ratings* t a = 25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics* t a = 25 c unless otherwise noted * device mounted on fr-4 pcb 1.6? x 1.6? x 0.06?. electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v dg drain-gate voltage 30 v v gs gate-source voltage -30 v i gf forward gate current 10 ma t j, t stg operating and storage junction temperature range -55 to +150 c symbol parameter value units p d total device dissipation derate above 25 c 225 1.8 mw mw/ c r ja thermal resistance, junction to ambient 556 c/w symbol parameter conditions min. max. units off characteristics v (br)gss gate-source breakdown voltage i g = -1.0 a, v ds = 0 -30 v i gss gate reverse current v gs = -20v, v ds = 0 -100 pa v gs (off) gate-source cutoff voltage v ds = 15v, i d = 1.0na -0.5 -3.0 v on characteristics i dss zero-gate voltage drain current* v ds = 15v, v gs = 0 1.0 8.0 ma small signal characteristics gfs forward transfer conductance v ds = 15v, v gs = 0, f = 1.0khz 3000 mhos g oss output conductance v ds = 15v, v gs = 0, f = 1.0khz 50 mhos note : drain & source are interchangeable. marking : 6q sot-23 d s g
MMBFJ305 ? n-channe l rf amplifier ? 2011 fairchild semiconductor corporation www.fairchildsemi.com MMBFJ305 rev. a0 2 physical dimensions sot-23 dimensions in millimeters
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